Document Detail

Observation of 1D Behavior in Si Nanowires: Towards High-Performance TFETs.
MedLine Citation:
PMID:  23030672     Owner:  NLM     Status:  Publisher    
This article provides experimental evidence of one-dimensional (1D) behavior of silicon (Si) nanowires (NWs) at low-temperature through both, transfer (Id-VG) and capacitance-voltage (CV) characteristics. For the first time, operation of Si NWs in the quantum capacitance limit (QCL) is experimentally demonstrated and quantitatively analyzed. This is of relevance since working in the QCL may allow, e.g., tunneling field-effect transistors (TFETs) to achieve higher on-currents (Ion) and larger ON/OFF current ratios (Ion/Ioff), thus addressing one of the most severe limitations of TFETs. Comparison of the experimental data with simulations finds excellent agreement using a simple capacitor model.
Ramon Salazar; Saumitra R Mehrotra; Gerhard Klimeck; Navab Singh; Joerg Appenzeller
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-10-3
Journal Detail:
Title:  Nano letters     Volume:  -     ISSN:  1530-6992     ISO Abbreviation:  Nano Lett.     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-3     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088070     Medline TA:  Nano Lett     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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