| Observation of 1D Behavior in Si Nanowires: Towards High-Performance TFETs. | |
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MedLine Citation:
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PMID: 23030672 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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This article provides experimental evidence of one-dimensional (1D) behavior of silicon (Si) nanowires (NWs) at low-temperature through both, transfer (Id-VG) and capacitance-voltage (CV) characteristics. For the first time, operation of Si NWs in the quantum capacitance limit (QCL) is experimentally demonstrated and quantitatively analyzed. This is of relevance since working in the QCL may allow, e.g., tunneling field-effect transistors (TFETs) to achieve higher on-currents (Ion) and larger ON/OFF current ratios (Ion/Ioff), thus addressing one of the most severe limitations of TFETs. Comparison of the experimental data with simulations finds excellent agreement using a simple capacitor model. |
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Authors:
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Ramon Salazar; Saumitra R Mehrotra; Gerhard Klimeck; Navab Singh; Joerg Appenzeller |
Publication Detail:
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Type: JOURNAL ARTICLE Date: 2012-10-3 |
Journal Detail:
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Title: Nano letters Volume: - ISSN: 1530-6992 ISO Abbreviation: Nano Lett. Publication Date: 2012 Oct |
Date Detail:
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Created Date: 2012-10-3 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101088070 Medline TA: Nano Lett Country: - |
Other Details:
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Languages: ENG Pagination: - Citation Subset: - |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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