Document Detail

Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.
MedLine Citation:
PMID:  23138192     Owner:  NLM     Status:  Publisher    
Nonvolatile resistive switching has been observed for the first time in CdSe nanowire (NW)/Au Schottky barrier diodes, where a Schottky contact electrode and an Ohmic contact electrode were formed at the Au/CdSe NW and CdSe NW/In interfaces, respectively. The CdSe NWs Schottky devices were found to possess multibit storage ability in an individual nanowire, and exhibited excellent memory characteristics, with a resistance on/off ratio exceeding four orders of magnitude, a long retention time of over 10(4) s and a lower operating voltage of 2 V. By replacing the SiO(2)/Si substrate with a poly ethylene terephthalate substrate, flexible and transparent memory devices with superior stability under strain were realized. The resistive switching of CdSe NW/Au Schottky devices is understood by electron trapping and detrapping in the interfacial oxide layer. Our findings provide a viable way to create new functional high-density nonvolatile multibit memory devices compatible with simple processing techniques for normal one-dimensional nanomaterials.
Di Wu; Yang Jiang; Yongqiang Yu; Yugang Zhang; Guohua Li; Zhifeng Zhu; Chunyan Wu; Li Wang; Linbao Luo; Jiansheng Jie
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-11-09
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Nov 
Date Detail:
Created Date:  2012-11-9     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  -    
Other Details:
Languages:  ENG     Pagination:  485203     Citation Subset:  -    
School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
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