Document Detail


Nanolasers grown on silicon-based MOSFETs.
MedLine Citation:
PMID:  22714204     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 °C). The MOSFETs maintain their performance after the nanopillar growth, providing a direct demonstration of complementary metal-oxide-semiconudctor (CMOS) compatibility. Room-temperature operation of optically pumped lasers is also achieved. To our knowledge, this is the first time that monolithically integrated lasers and transistors have been shown to work on the same silicon chip, serving as a proof-of-concept that such integration can be extended to more complicated CMOS integrated circuits.
Authors:
Fanglu Lu; Thai-Truong D Tran; Wai Son Ko; Kar Wei Ng; Roger Chen; Connie Chang-Hasnain
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Optics express     Volume:  20     ISSN:  1094-4087     ISO Abbreviation:  Opt Express     Publication Date:  2012 May 
Date Detail:
Created Date:  2012-06-20     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101137103     Medline TA:  Opt Express     Country:  United States    
Other Details:
Languages:  eng     Pagination:  12171-6     Citation Subset:  IM    
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