Document Detail


Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO(2) mask.
MedLine Citation:
PMID:  23154824     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.3 × 10(5) cm(-2). Compared with the full width at half maximum measurement from x-ray diffraction and photoluminescence spectra of GaAs on a planar Si(001) substrate, those of GaAs on the 55 nm round-hole patterned Si substrate are reduced by 39.6 and 31.4%, respectively. The improvement in material quality is verified by transmission electron microscopy, field-emission scanning electron microscopy, Hall measurements, Raman spectroscopy, photoluminescence, and x-ray diffraction studies.
Authors:
Chao-Wei Hsu; Yung-Feng Chen; Yan-Kuin Su
Related Documents :
23893424 - Spatially-resolved in-situ structural study of organic electronic devices with nanoscal...
6631774 - Ultrastructural study on the development of babesia equi (coccidia: piroplasmia) in the...
23827624 - Investigation on the effect of collagen and vitamins on biomimetic hydroxyapatite coati...
25121124 - Electronically tunable quadrature oscillator using grounded components with current and...
14647934 - Cluster calibration in mass spectrometry: laser desorption/ionization studies of atomic...
21823694 - Least-squares analysis of overlapped bound-free absorption spectra and predissociation ...
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-11-16
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Nov 
Date Detail:
Created Date:  2012-11-16     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  -    
Other Details:
Languages:  ENG     Pagination:  495306     Citation Subset:  -    
Affiliation:
Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan City 701, Taiwan.
Export Citation:
APA/MLA Format     Download EndNote     Download BibTex
MeSH Terms
Descriptor/Qualifier:

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


Previous Document:  Rolled-up magnetic microdrillers: towards remotely controlled minimally invasive surgery.
Next Document:  Lumican regulates ventilation-induced epithelial-mesenchymal transition through extracelluar signal-...