| Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO(2) mask. | |
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MedLine Citation:
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PMID: 23154824 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.3 × 10(5) cm(-2). Compared with the full width at half maximum measurement from x-ray diffraction and photoluminescence spectra of GaAs on a planar Si(001) substrate, those of GaAs on the 55 nm round-hole patterned Si substrate are reduced by 39.6 and 31.4%, respectively. The improvement in material quality is verified by transmission electron microscopy, field-emission scanning electron microscopy, Hall measurements, Raman spectroscopy, photoluminescence, and x-ray diffraction studies. |
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Authors:
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Chao-Wei Hsu; Yung-Feng Chen; Yan-Kuin Su |
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Publication Detail:
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Type: JOURNAL ARTICLE Date: 2012-11-16 |
Journal Detail:
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Title: Nanotechnology Volume: 23 ISSN: 1361-6528 ISO Abbreviation: Nanotechnology Publication Date: 2012 Nov |
Date Detail:
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Created Date: 2012-11-16 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101241272 Medline TA: Nanotechnology Country: - |
Other Details:
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Languages: ENG Pagination: 495306 Citation Subset: - |
Affiliation:
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Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan City 701, Taiwan. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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