Document Detail


Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect.
MedLine Citation:
PMID:  23161658     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 ± 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano-Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro-/nanosensor arrays or artificial skin.
Authors:
Yu Sheng Zhou; Ronan Hinchet; Ya Yang; Gustavo Ardila; Rudeesun Songmuang; Fang Zhang; Yan Zhang; Weihua Han; Ken Pradel; Laurent Montès; Mireille Mouis; Zhong Lin Wang
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-11-19
Journal Detail:
Title:  Advanced materials (Deerfield Beach, Fla.)     Volume:  -     ISSN:  1521-4095     ISO Abbreviation:  Adv. Mater. Weinheim     Publication Date:  2012 Nov 
Date Detail:
Created Date:  2012-11-19     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  9885358     Medline TA:  Adv Mater     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Copyright Information:
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
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