Document Detail


Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors.
MedLine Citation:
PMID:  22094690     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
For more than four decades, transistors have been shrinking exponentially in size, and therefore the number of transistors in a single microelectronic chip has been increasing exponentially. Such an increase in packing density was made possible by continually shrinking the metal-oxide-semiconductor field-effect transistor (MOSFET). In the current generation of transistors, the transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in transistor size can continue. Recently, however, a new generation of MOSFETs, called multigate transistors, has emerged, and this multigate geometry will allow the continuing enhancement of computer performance into the next decade.
Authors:
Isabelle Ferain; Cynthia A Colinge; Jean-Pierre Colinge
Publication Detail:
Type:  Journal Article     Date:  2011-11-16
Journal Detail:
Title:  Nature     Volume:  479     ISSN:  1476-4687     ISO Abbreviation:  Nature     Publication Date:  2011  
Date Detail:
Created Date:  2011-11-18     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0410462     Medline TA:  Nature     Country:  England    
Other Details:
Languages:  eng     Pagination:  310-6     Citation Subset:  IM    
Affiliation:
Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland.
Export Citation:
APA/MLA Format     Download EndNote     Download BibTex
MeSH Terms
Descriptor/Qualifier:

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


Previous Document:  Complexity of Motor Response to Different Doses of Duodenal Levodopa Infusion in Parkinson Disease.
Next Document:  Nanometre-scale electronics with III-V compound semiconductors.