| Modelling very large magnetoresistance of graphene nanoribbon devices. | |
| | |
MedLine Citation:
|
PMID: 22234332 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
|
We model a very large, tunable magnetoresistance (MR) in a graphene nanoribbon field-effect transistor, without artificial engineering of ferromagnetic contacts. A high MR of nearly 100% (about 50%) is obtained at low temperature (room temperature). We show that the MR ratio can be further tuned by using conventional electric field, in agreement with a recent experiment. The simulation results indicate that the large MR of GNRs stems from reduction of the bandgap of GNRs in the presence of applied magnetic field related to the 0(th) Landau level in graphene. Interestingly, in a more realistic device with edge roughness, the MR ratio is not degraded but rather enhanced, caused by the magnetic field induced spatial separation of the transport states. The large, tunable MR of GNRs resistant to edge roughness is attractive to device applications. |
| | |
Authors:
|
S Bala Kumar; Jing Guo |
Publication Detail:
|
Type: JOURNAL ARTICLE Date: 2012-1-11 |
Journal Detail:
|
Title: Nanoscale Volume: - ISSN: 2040-3372 ISO Abbreviation: - Publication Date: 2012 Jan |
Date Detail:
|
Created Date: 2012-1-11 Completed Date: - Revised Date: - |
Medline Journal Info:
|
Nlm Unique ID: 101525249 Medline TA: Nanoscale Country: - |
Other Details:
|
Languages: ENG Pagination: - Citation Subset: - |
Affiliation:
|
Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32608, USA. guoj@ufl.edu. |
Export Citation:
|
APA/MLA Format Download EndNote Download BibTex |
| MeSH Terms | |
Descriptor/Qualifier:
|
|
From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
Previous Document: Stereoisomers ginsenosides-20(S)-Rg(3) and -20(R)-Rg(3) differentially induce angiogenesis through p...
Next Document: Cerebral microinfarcts: a systematic review of neuropathological studies.