| Modeling the field diffracted from photo mask at oblique incidence. | |
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MedLine Citation:
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PMID: 20676175 Owner: NLM Status: In-Process |
Abstract/OtherAbstract:
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In optical lithography, light diffracted from photo mask structures has been customarily assumed to be constant with the angle of incidence of the light illuminating the photo mask. As numerical aperture increases to unity and beyond, to cope with the continuous demand for shrinking integrated circuits, device dimensions, and densities, this approximation is no longer valid. In this paper we use the physical theory of diffraction to study, understand, and model the variation of light diffracted from photo mask structures of the order of the wavelength, with the angle of light incidence. We present a semianalytical model that is fast, accurate, and compatible with existing professional software in this domain. The accuracy of the model is studied using the finite-difference time-domain technique and is shown to be below 5% at the image plane, within angles of incidence between +/-20 degrees . |
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Authors:
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Tamer Tawfik Elazhary; Ahmed Hisham Morshed; Diaa Khalil |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Applied optics Volume: 49 ISSN: 1539-4522 ISO Abbreviation: Appl Opt Publication Date: 2010 Aug |
Date Detail:
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Created Date: 2010-08-02 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 0247660 Medline TA: Appl Opt Country: United States |
Other Details:
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Languages: eng Pagination: 4207-16 Citation Subset: - |
Affiliation:
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Electronics and Communications Engineering Department, Faculty of Engineering, Ain Shams University,1 El-Sarayat Street, Abbassia, Cairo, 11571, Egypt. tamer.tawfik@osamember.org |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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