Document Detail

Metallization of the single component molecular semiconductor [Ni(ptdt)2] under very high pressure.
MedLine Citation:
PMID:  19382788     Owner:  NLM     Status:  PubMed-not-MEDLINE    
The four-probe electrical resistivity measurements on a single-component molecular semiconductor [Ni(ptdt)(2)] (Ni(S(8)C(9)H(6))(2)) was performed up to 20.7 GPa by using a diamond anvil cell. A newly improved method was employed to reduce the effect of uniaxial pressure. The semiconducting behavior persisted up to 17.9 GPa. The pressure-induced metallization began to appear at 18.9 GPa, and the complete metallic behavior down to 1 K was observed at 19.9 GPa.
Hengbo Cui; James S Brooks; Akiko Kobayashi; Hayao Kobayashi
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Journal of the American Chemical Society     Volume:  131     ISSN:  1520-5126     ISO Abbreviation:  J. Am. Chem. Soc.     Publication Date:  2009 May 
Date Detail:
Created Date:  2009-05-06     Completed Date:  2009-07-27     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  7503056     Medline TA:  J Am Chem Soc     Country:  United States    
Other Details:
Languages:  eng     Pagination:  6358-9     Citation Subset:  -    
Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee Florida 32310, USA.
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