| Metallization of the single component molecular semiconductor [Ni(ptdt)2] under very high pressure. | |
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MedLine Citation:
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PMID: 19382788 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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The four-probe electrical resistivity measurements on a single-component molecular semiconductor [Ni(ptdt)(2)] (Ni(S(8)C(9)H(6))(2)) was performed up to 20.7 GPa by using a diamond anvil cell. A newly improved method was employed to reduce the effect of uniaxial pressure. The semiconducting behavior persisted up to 17.9 GPa. The pressure-induced metallization began to appear at 18.9 GPa, and the complete metallic behavior down to 1 K was observed at 19.9 GPa. |
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Authors:
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Hengbo Cui; James S Brooks; Akiko Kobayashi; Hayao Kobayashi |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Journal of the American Chemical Society Volume: 131 ISSN: 1520-5126 ISO Abbreviation: J. Am. Chem. Soc. Publication Date: 2009 May |
Date Detail:
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Created Date: 2009-05-06 Completed Date: 2009-07-27 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 7503056 Medline TA: J Am Chem Soc Country: United States |
Other Details:
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Languages: eng Pagination: 6358-9 Citation Subset: - |
Affiliation:
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Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee Florida 32310, USA. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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