Document Detail

Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: implications to ferromagnetism.
MedLine Citation:
PMID:  18764655     Owner:  NLM     Status:  PubMed-not-MEDLINE    
We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4% As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature T_{C} from 113 to 60 K (100 to 65 K) upon the introduction of 3.1% P (1% N) into the As sublattice.
P R Stone; K Alberi; S K Z Tardif; J W Beeman; K M Yu; W Walukiewicz; O D Dubon
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Publication Detail:
Type:  Journal Article     Date:  2008-08-20
Journal Detail:
Title:  Physical review letters     Volume:  101     ISSN:  0031-9007     ISO Abbreviation:  Phys. Rev. Lett.     Publication Date:  2008 Aug 
Date Detail:
Created Date:  2008-09-03     Completed Date:  2008-10-07     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0401141     Medline TA:  Phys Rev Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  087203     Citation Subset:  -    
Department of Materials Science & Engineering, University of California, Berkeley, California 94720, USA.
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