| Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: implications to ferromagnetism. | |
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MedLine Citation:
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PMID: 18764655 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4% As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature T_{C} from 113 to 60 K (100 to 65 K) upon the introduction of 3.1% P (1% N) into the As sublattice. |
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Authors:
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P R Stone; K Alberi; S K Z Tardif; J W Beeman; K M Yu; W Walukiewicz; O D Dubon |
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Publication Detail:
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Type: Journal Article Date: 2008-08-20 |
Journal Detail:
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Title: Physical review letters Volume: 101 ISSN: 0031-9007 ISO Abbreviation: Phys. Rev. Lett. Publication Date: 2008 Aug |
Date Detail:
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Created Date: 2008-09-03 Completed Date: 2008-10-07 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 0401141 Medline TA: Phys Rev Lett Country: United States |
Other Details:
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Languages: eng Pagination: 087203 Citation Subset: - |
Affiliation:
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Department of Materials Science & Engineering, University of California, Berkeley, California 94720, USA. prstone@berkeley.edu |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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