Document Detail


Mechanical and electrical properties of epitaxial Si nanowires grown by pulsed laser deposition.
MedLine Citation:
PMID:  23033061     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
We report on the elastic and piezoresistive properties of individual epitaxial Si-NWs grown on n-doped Si(111) by pulsed laser deposition. Using scanning probe microscopy, we obtained a Young's modulus between 82 and 900 GPa for the nanowires, unaffected by the nanowire shape. A relative resistivity change is observed in the prestrained (curved) Si-NWs, which we attribute to a large piezoresistance coefficient in the NW along its axis. Assuming that for the bent NWs the effect of longitudinal stress on resistivity is compensated, the piezoresistance coefficient originating in the shear strain alone, we found a piezoresistance gauge factor (GF) of 600, which is close to the values reported in literature for Si-NWs.
Authors:
D Obi; R Nechache; C Harnagea; F Rosei
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-10-03
Journal Detail:
Title:  Journal of physics. Condensed matter : an Institute of Physics journal     Volume:  24     ISSN:  1361-648X     ISO Abbreviation:  J Phys Condens Matter     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-3     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101165248     Medline TA:  J Phys Condens Matter     Country:  -    
Other Details:
Languages:  ENG     Pagination:  445008     Citation Subset:  -    
Affiliation:
INRS-Énergie, Matériaux et Télécommunications, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, J3X 1S2, Canada.
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