| Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber. | |
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MedLine Citation:
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PMID: 19997246 Owner: NLM Status: MEDLINE |
Abstract/OtherAbstract:
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The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model. |
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Authors:
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Huapu Pan; Zhi Li; Andreas Beling; Joe C Campbell |
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Publication Detail:
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Type: Evaluation Studies; Journal Article |
Journal Detail:
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Title: Optics express Volume: 17 ISSN: 1094-4087 ISO Abbreviation: Opt Express Publication Date: 2009 Oct |
Date Detail:
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Created Date: 2009-12-09 Completed Date: 2010-02-22 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101137103 Medline TA: Opt Express Country: United States |
Other Details:
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Languages: eng Pagination: 20221-6 Citation Subset: IM |
Affiliation:
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Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA. hp5n@virginia.edu |
Export Citation:
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| MeSH Terms | |
Descriptor/Qualifier:
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Computer-Aided Design Equipment Design Equipment Failure Analysis Photometry / instrumentation* Reproducibility of Results Semiconductors* Sensitivity and Specificity |
From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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