| Magnetoamplification in a bipolar magnetic junction transistor. | |
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MedLine Citation:
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PMID: 20867602 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally observed transistor characteristics, we propose a modified Ebers-Moll model that includes a series magnetoresistance attributed to spin-selective conduction. The capability of magnetic field control of the amplification in an all-semiconductor transistor at room temperature potentially enables the creation of new computer logic architecture where the spin of the carriers is utilized. |
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Authors:
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N Rangaraju; J A Peters; B W Wessels |
Publication Detail:
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Type: Journal Article Date: 2010-09-09 |
Journal Detail:
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Title: Physical review letters Volume: 105 ISSN: 1079-7114 ISO Abbreviation: Phys. Rev. Lett. Publication Date: 2010 Sep |
Date Detail:
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Created Date: 2010-09-27 Completed Date: 2011-01-12 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 0401141 Medline TA: Phys Rev Lett Country: United States |
Other Details:
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Languages: eng Pagination: 117202 Citation Subset: - |
Affiliation:
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Materials Research Center, Northwestern University, Evanston, Illinois, USA. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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