Document Detail


Lithography-Free Fabrication of Large Area Subwavelength Antireflection Structures Using Thermally Dewetted Pt/Pd Alloy Etch Mask.
MedLine Citation:
PMID:  20596495     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
We have demonstrated lithography-free, simple, and large area fabrication method for subwavelength antireflection structures (SAS) to achieve low reflectance of silicon (Si) surface. Thin film of Pt/Pd alloy on a Si substrate is melted and agglomerated into hemispheric nanodots by thermal dewetting process, and the array of the nanodots is used as etch mask for reactive ion etching (RIE) to form SAS on the Si surface. Two critical parameters, the temperature of thermal dewetting processes and the duration of RIE, have been experimentally studied to achieve very low reflectance from SAS. All the SAS have well-tapered shapes that the refractive index may be changed continuously and monotonously in the direction of incident light. In the wavelength range from 350 to 1800 nm, the measured reflectance of the fabricated SAS averages out to 5%. Especially in the wavelength range from 550 to 650 nm, which falls within visible light, the measured reflectance is under 0.01%.
Authors:
Youngjae Lee; Kisik Koh; Hyungjoo Na; Kwanoh Kim; Jeong-Jin Kang; Jongbaeg Kim
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2009-1-24
Journal Detail:
Title:  Nanoscale research letters     Volume:  4     ISSN:  1556-276X     ISO Abbreviation:  -     Publication Date:  2009  
Date Detail:
Created Date:  2010-7-2     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101279750     Medline TA:  Nanoscale Res Lett     Country:  -    
Other Details:
Languages:  ENG     Pagination:  364-370     Citation Subset:  -    
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