Document Detail

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor.
MedLine Citation:
PMID:  23033073     Owner:  NLM     Status:  PubMed-not-MEDLINE    
Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclassical random resistor network model. However, the link between the linear magnetoresistance and the microscopic nature of the electron dynamics remains unknown. Here we demonstrate how the linear magnetoresistance arises from the stochastic behaviour of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous conductors and that this process is only weakly affected by the applied electric field strength. Also, we establish a quantitative link between the island morphology and the strength of linear magnetoresistance of relevance for future applications.
N V Kozlova; N Mori; O Makarovsky; L Eaves; Q D Zhuang; A Krier; A Patanè
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Nature communications     Volume:  3     ISSN:  2041-1723     ISO Abbreviation:  Nat Commun     Publication Date:  2012  
Date Detail:
Created Date:  2012-10-03     Completed Date:  2013-02-01     Revised Date:  2013-02-19    
Medline Journal Info:
Nlm Unique ID:  101528555     Medline TA:  Nat Commun     Country:  England    
Other Details:
Languages:  eng     Pagination:  1097     Citation Subset:  -    
School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UK.
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