| Laterally-current-injected light-emitting diodes based on nanocrystalline-Si/SiO<sub>2</sub> superlattice. | |
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MedLine Citation:
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PMID: 21369094 Owner: NLM Status: In-Data-Review |
Abstract/OtherAbstract:
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Laterally electrically-pumped Si light-emitting diodes (LEDs) based on truncated nanocrystalline-Si (nc-Si)/SiO<sub>2</sub> quantum wells are fabricated with complementary-metal-semiconductor-oxide (CMOS) process. Visible electroluminescence (EL) can be observed under a reverse bias larger than ~6 V. The light emission would probably originate from the spontaneous hot-carrier relaxations within the conduction and the valance bands when the device is sufficiently reverse-biased. The EL spectral profile is found to be modulated by varying structure parameters of the interdigitated finger electrodes. Up to ~20 times EL intensity enhancement is achieved as compared to vertical-current-injection LED prepared using the same material system. Based on the lateral-current-injection scheme, a Si/SiO<sub>2</sub> MQW LED with Fabry-Perot (FP) microcavity and an on-chip waveguided LED that emits at 1.55-µm are proposed. |
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Authors:
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L Ding; M B Yu; Xiaoguang Tu; G Q Lo; S Tripathy; T P Chen |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Optics express Volume: 19 ISSN: 1094-4087 ISO Abbreviation: Opt Express Publication Date: 2011 Jan |
Date Detail:
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Created Date: 2011-03-03 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101137103 Medline TA: Opt Express Country: United States |
Other Details:
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Languages: eng Pagination: 2729-38 Citation Subset: IM |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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