Document Detail


Intermediate-band solar cells employing quantum dots embedded in an energy fence barrier.
MedLine Citation:
PMID:  17212467     Owner:  NLM     Status:  MEDLINE    
Abstract/OtherAbstract:
Power efficiencies>60% have been predicted for idealized quantum dot (QD) intermediate band solar cells. This goal has not yet been realized, due in part to nonidealities that result in charge trapping followed by recombination of photocarriers in the QDs, and the lack of an optimal materials combination. To eliminate charge trapping, a p+-i-n+ cell employing QDs buried within a high band gap barrier layer is proposed and analyzed. The maximum solar power conversion efficiency under AM1.5 spectral radiation of an example GaAs-based photovoltaic cell employing 10-20 layers of InAs QDs surrounded by AlxGa1-xAs barriers in the junction built-in depletion region can be as high as 45%. Higher efficiencies are anticipated for InP-based cells. This represents a significant improvement over GaAs homojunction cells with maximum efficiencies of <25%.
Authors:
Guodan Wei; Stephen R Forrest
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Nano letters     Volume:  7     ISSN:  1530-6984     ISO Abbreviation:  Nano Lett.     Publication Date:  2007 Jan 
Date Detail:
Created Date:  2007-01-10     Completed Date:  2007-03-13     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088070     Medline TA:  Nano Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  218-22     Citation Subset:  IM    
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA.
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MeSH Terms
Descriptor/Qualifier:
Electric Power Supplies*
Quantum Theory*
Sunlight*

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


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