Document Detail

Infrared probe of itinerant ferromagnetism in Ga(1-x)Mn(x)As.
MedLine Citation:
PMID:  12190433     Owner:  NLM     Status:  PubMed-not-MEDLINE    
The doping and temperature dependence of the complex conductivity is determined for the ferromagnetic semiconductor Ga(1-x)Mn(x)As. A broad resonance develops with Mn doping at an energy scale of approximately 200 meV, well within the GaAs band gap. Possible origins of this feature are explored in the context of a Mn induced impurity band and intervalence band transitions. From a sum rule analysis of the conductivity data the effective mass of the itinerant charge carriers is found to be at least a factor of 3 greater than what is expected for hole doped GaAs. In the ferromagnetic state a significant decrease in the effective mass is observed, demonstrating the role played by the heavy carriers in inducing ferromagnetism in this system.
E J Singley; R Kawakami; D D Awschalom; D N Basov
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Publication Detail:
Type:  Journal Article     Date:  2002-08-09
Journal Detail:
Title:  Physical review letters     Volume:  89     ISSN:  0031-9007     ISO Abbreviation:  Phys. Rev. Lett.     Publication Date:  2002 Aug 
Date Detail:
Created Date:  2002-08-22     Completed Date:  2002-10-16     Revised Date:  2003-11-04    
Medline Journal Info:
Nlm Unique ID:  0401141     Medline TA:  Phys Rev Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  097203     Citation Subset:  -    
Department of Physics, University of California, San Diego, California 92093-0319, USA.
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