| Infrared probe of itinerant ferromagnetism in Ga(1-x)Mn(x)As. | |
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MedLine Citation:
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PMID: 12190433 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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The doping and temperature dependence of the complex conductivity is determined for the ferromagnetic semiconductor Ga(1-x)Mn(x)As. A broad resonance develops with Mn doping at an energy scale of approximately 200 meV, well within the GaAs band gap. Possible origins of this feature are explored in the context of a Mn induced impurity band and intervalence band transitions. From a sum rule analysis of the conductivity data the effective mass of the itinerant charge carriers is found to be at least a factor of 3 greater than what is expected for hole doped GaAs. In the ferromagnetic state a significant decrease in the effective mass is observed, demonstrating the role played by the heavy carriers in inducing ferromagnetism in this system. |
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Authors:
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E J Singley; R Kawakami; D D Awschalom; D N Basov |
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Publication Detail:
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Type: Journal Article Date: 2002-08-09 |
Journal Detail:
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Title: Physical review letters Volume: 89 ISSN: 0031-9007 ISO Abbreviation: Phys. Rev. Lett. Publication Date: 2002 Aug |
Date Detail:
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Created Date: 2002-08-22 Completed Date: 2002-10-16 Revised Date: 2003-11-04 |
Medline Journal Info:
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Nlm Unique ID: 0401141 Medline TA: Phys Rev Lett Country: United States |
Other Details:
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Languages: eng Pagination: 097203 Citation Subset: - |
Affiliation:
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Department of Physics, University of California, San Diego, California 92093-0319, USA. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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