| Independent magnetization behavior of a ferromagnetic metal-semiconductor hybrid system. | |
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MedLine Citation:
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PMID: 19659175 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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We report the discovery of an effect where two ferromagnetic materials, one semiconductor [(Ga,Mn)As] and one metal (Permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four nonvolatile resistance states. |
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Authors:
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S Mark; C Gould; K Pappert; J Wenisch; K Brunner; G Schmidt; L W Molenkamp |
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Publication Detail:
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Type: Journal Article Date: 2009-07-02 |
Journal Detail:
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Title: Physical review letters Volume: 103 ISSN: 0031-9007 ISO Abbreviation: Phys. Rev. Lett. Publication Date: 2009 Jul |
Date Detail:
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Created Date: 2009-08-07 Completed Date: 2009-09-01 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 0401141 Medline TA: Phys Rev Lett Country: United States |
Other Details:
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Languages: eng Pagination: 017204 Citation Subset: - |
Affiliation:
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Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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