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InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film.
MedLine Citation:
PMID:  21165089     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO₂ mask layer was patterned on a heavily doped n-GaN template layer rather than on a sapphire substrate. As a result, the periphery of the LED included several OSFs around the regrown GaN mesa. While processing the device, dry etching was unnecessary for exposing the n-GaN underlying layer in order to form the n-type Ohmic contacts. This could be attributed to the fact that the n-GaN template layer with an electron concentration of around 8 × 10¹⁸/cm³ was exposed after the removal of the SiO₂ mask layer. With an injection current of 20 mA, GaN-based LEDs with OSFs exhibited a 21% enhancement in light output compared with those that have vertical sidewall facets. The enhancement is attributed to the fact that photons extracted from OSFs can reduce internal absorption loss.
Authors:
Jinn-Kong Sheu; Kuo-Hua Chang; Shang-Ju Tu; Ming-Lun Lee; Chih-Ciao Yang; Che-Kang Hsu; Wei-Chih Lai
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Optics express     Volume:  18 Suppl 4     ISSN:  1094-4087     ISO Abbreviation:  Opt Express     Publication Date:  2010 Nov 
Date Detail:
Created Date:  2010-12-17     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101137103     Medline TA:  Opt Express     Country:  United States    
Other Details:
Languages:  eng     Pagination:  A562-7     Citation Subset:  IM    
Affiliation:
Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center & Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan City 70101, Taiwan. jksheu@mail.ncku.edu.tw
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