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How Quickly Does a Hole Relax into an Engineered Defect State in CdSe Quantum Dots.
MedLine Citation:
PMID:  22439798     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Intraband hole relaxation of colloidal tellurium (Te) doped CdSe quantum dots is studied using state selective transient absorption spectroscopy. The dots are excited at the band edge and the defect band bleach caused by state filling of the hole is probed. Close to the defect energy the hole relaxation is substantially slowed down, indicating a gap separating the defect state from the $CdSe$ band edge. A clear dependence of the relaxation time with the QD's size is presented, implying that the hole relaxation is mediated by longitudinal-optical (LO) phonon modes of the CdSe host. In addition, we find that over-coating the quantum dots by two monolayers of a ZnS shell, extends the hole relaxation time by a factor of two, suggesting a combined effect of LO-phonons and surface effects governing intraband hole relaxation.
Authors:
Assaf Avidan; Iddo Pinkas; Dan Oron
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-3-22
Journal Detail:
Title:  ACS nano     Volume:  -     ISSN:  1936-086X     ISO Abbreviation:  -     Publication Date:  2012 Mar 
Date Detail:
Created Date:  2012-3-23     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101313589     Medline TA:  ACS Nano     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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