Document Detail


Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene.
MedLine Citation:
PMID:  23033077     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
Transparent electronic memory would be useful in integrated transparent electronics. However, achieving such transparency produces limits in material composition, and hence, hinders processing and device performance. Here we present a route to fabricate highly transparent memory using SiO(x) as the active material and indium tin oxide or graphene as the electrodes. The two-terminal, nonvolatile resistive memory can also be configured in crossbar arrays on glass or flexible transparent platforms. The filamentary conduction in silicon channels generated in situ in the SiO(x) maintains the current level as the device size decreases, underscoring their potential for high-density memory applications, and as they are two-terminal based, transitions to three-dimensional memory packages are conceivable. As glass is becoming one of the mainstays of building construction materials, and conductive displays are essential in modern handheld devices, to have increased functionality in form-fitting packages is advantageous.
Authors:
Jun Yao; Jian Lin; Yanhua Dai; Gedeng Ruan; Zheng Yan; Lei Li; Lin Zhong; Douglas Natelson; James M Tour
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Nature communications     Volume:  3     ISSN:  2041-1723     ISO Abbreviation:  Nat Commun     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-03     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101528555     Medline TA:  Nat Commun     Country:  England    
Other Details:
Languages:  eng     Pagination:  1101     Citation Subset:  IM    
Affiliation:
1] Applied Physics Program through the Department of Bioengineering, 6100 Main Street, Houston, Texas 77005, USA. [2].
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