| Highly doped polycrystalline silicon microelectrodes reduce noise in neuronal recordings in vivo. | |
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MedLine Citation:
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PMID: 20667815 Owner: NLM Status: In-Process |
Abstract/OtherAbstract:
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The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0-200 μV) and 2) test if noise amplitudes ( 0-15 μV ) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9-10 kΩ for voltages typical of neural signal amplitudes ( > 150-200 μV). Acute multiunit measurements and noise measurements were made in n=6 and n=8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ±10.13 pW) was significantly higher than the corresponding value in polycrystalline silicon microelectrodes (7.49 ±2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. |
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Authors:
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Rajarshi Saha; Nathan Jackson; Chetan Patel; Jit Muthuswamy |
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Publication Detail:
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Type: Journal Article; Research Support, N.I.H., Extramural; Research Support, Non-U.S. Gov't Date: 2010-07-26 |
Journal Detail:
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Title: IEEE transactions on neural systems and rehabilitation engineering : a publication of the IEEE Engineering in Medicine and Biology Society Volume: 18 ISSN: 1558-0210 ISO Abbreviation: IEEE Trans Neural Syst Rehabil Eng Publication Date: 2010 Oct |
Date Detail:
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Created Date: 2010-10-11 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101097023 Medline TA: IEEE Trans Neural Syst Rehabil Eng Country: United States |
Other Details:
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Languages: eng Pagination: 489-97 Citation Subset: IM |
Affiliation:
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Department of Electrical Engineering, Arizona StateUniversity, Tempe, AZ 85287, USA. rajarshi.saha@chbe.gatech.edu |
Export Citation:
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Descriptor/Qualifier:
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| Grant Support | |
ID/Acronym/Agency:
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R01NS055312/NS/NINDS NIH HHS |
From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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