Document Detail


High pressure Raman scattering of silicon nanowires.
MedLine Citation:
PMID:  21430319     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
We study the high pressure response, up to 8 GPa, of silicon nanowires (SiNWs) with ∼ 15 nm diameter, by Raman spectroscopy. The first order Raman peak shows a superlinear trend, more pronounced compared to bulk Si. Combining transmission electron microscopy and Raman measurements we estimate the SiNWs' bulk modulus and the Grüneisen parameters. We detect an increase of Raman linewidth at ∼ 4 GPa, and assign it to pressure induced activation of a decay process into LO and TA phonons. This pressure is smaller compared to the ∼ 7 GPa reported for bulk Si. We do not observe evidence of phase transitions, such as discontinuities or change in the pressure slopes, in the investigated pressure range.
Authors:
Sevak Khachadorian; Konstantinos Papagelis; Harald Scheel; Alan Colli; Andrea C Ferrari; Christian Thomsen
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Publication Detail:
Type:  Journal Article     Date:  2011-03-23
Journal Detail:
Title:  Nanotechnology     Volume:  22     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2011 May 
Date Detail:
Created Date:  2011-03-25     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  195707     Citation Subset:  IM    
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany.
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