| High-performance transistors based on zinc tin oxides by single spin-coating process. | |
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MedLine Citation:
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PMID: 23210920 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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Films of the zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolving in 2-methoxyethanol, have been used to fabricate thin film transistors (TFTs) in combination with solution-processed aluminum oxide as the gate insulator. And the non-homogeneity of the single-layer ZTO films, caused by both ZTO film-substrate interaction and surface crystallization, has been studied, which is essential to achieve high performance transistors. In the bottom-contact thin film transistor based on a Sn-rich layer of ZTO, a high mobility of 78.9 cm2 V-1 s-1 in the saturation region has been obtained, with an on-to-off current ratio of 105 and a threshold gate voltage of 1.6 V. |
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Authors:
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Yunlong Zhao; Lian Duan; Guifang Dong; Deqiang Zhang; Juan Qiao; Liduo Wang; Yong Qiu |
Publication Detail:
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Type: JOURNAL ARTICLE Date: 2012-12-5 |
Journal Detail:
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Title: Langmuir : the ACS journal of surfaces and colloids Volume: - ISSN: 1520-5827 ISO Abbreviation: Langmuir Publication Date: 2012 Dec |
Date Detail:
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Created Date: 2012-12-5 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 9882736 Medline TA: Langmuir Country: - |
Other Details:
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Languages: ENG Pagination: - Citation Subset: - |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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