Document Detail


High-performance transistors based on zinc tin oxides by single spin-coating process.
MedLine Citation:
PMID:  23210920     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Films of the zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolving in 2-methoxyethanol, have been used to fabricate thin film transistors (TFTs) in combination with solution-processed aluminum oxide as the gate insulator. And the non-homogeneity of the single-layer ZTO films, caused by both ZTO film-substrate interaction and surface crystallization, has been studied, which is essential to achieve high performance transistors. In the bottom-contact thin film transistor based on a Sn-rich layer of ZTO, a high mobility of 78.9 cm2 V-1 s-1 in the saturation region has been obtained, with an on-to-off current ratio of 105 and a threshold gate voltage of 1.6 V.
Authors:
Yunlong Zhao; Lian Duan; Guifang Dong; Deqiang Zhang; Juan Qiao; Liduo Wang; Yong Qiu
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-12-5
Journal Detail:
Title:  Langmuir : the ACS journal of surfaces and colloids     Volume:  -     ISSN:  1520-5827     ISO Abbreviation:  Langmuir     Publication Date:  2012 Dec 
Date Detail:
Created Date:  2012-12-5     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  9882736     Medline TA:  Langmuir     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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