Document Detail

High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature.
MedLine Citation:
PMID:  19636097     Owner:  NLM     Status:  PubMed-not-MEDLINE    
Transparent thin-film transistors with bottom-gate figure are fabricated by sputter deposition of an Sb-doped SnO2 nanocrystal channel layer onto glass substrates at room temperature with plasma-enhanced chemical vapor deposition SiO2 gate dielectrics and sputtering ITO electrodes. These devices exhibit high-performance n-type transistor characteristics operating in depletion mode with an ultrahigh field-effect mobility of 158 cm(2) V(-1) s(-1). The current on/off ratio and the subthreshold swing are found to be 3 x 10(4) and 0.2 V/decade, respectively. These achievements demonstrate that SnO2-based nanocrystal thin-film transistors are promising for high-speed transparent and flexible electronics on temperature-sensitive substrates.
Jia Sun; Aixia Lu; Liping Wang; Yu Hu; Qing Wan
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't     Date:  2009-07-28
Journal Detail:
Title:  Nanotechnology     Volume:  20     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2009 Aug 
Date Detail:
Created Date:  2009-07-31     Completed Date:  2009-10-13     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  335204     Citation Subset:  -    
Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People's Republic of China.
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