Document Detail


High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.
MedLine Citation:
PMID:  20588958     Owner:  NLM     Status:  MEDLINE    
Abstract/OtherAbstract:
We demonstrate a highly-efficient, large-area (1x1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased approximately 1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.
Authors:
Sun-Kyung Kim; Jin Wook Lee; Ho-Seok Ee; Yong-Tae Moon; Soon-Hong Kwon; Hoki Kwon; Hong-Gyu Park
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Optics express     Volume:  18     ISSN:  1094-4087     ISO Abbreviation:  Opt Express     Publication Date:  2010 May 
Date Detail:
Created Date:  2010-06-30     Completed Date:  2010-11-22     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101137103     Medline TA:  Opt Express     Country:  United States    
Other Details:
Languages:  eng     Pagination:  11025-32     Citation Subset:  IM    
Affiliation:
Advanced Technology Lab, LED Division, LG Innotek, Seoul 137-724, Korea. jclub79@gmail.com
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MeSH Terms
Descriptor/Qualifier:
Equipment Design
Equipment Failure Analysis
Gallium / chemistry*
Lighting / instrumentation*
Semiconductors*
Chemical
Reg. No./Substance:
0/gallium nitride; 7440-55-3/Gallium

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


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