Document Detail


High efficiency GaN-based light-emitting diodes with embedded air voids/SiO(2) nanomasks.
MedLine Citation:
PMID:  22222308     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
In this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded microscale air voids and an SiO(2) nanomask by metal-organic chemical vapor deposition (MOCVD) were demonstrated. Microscale air voids and an SiO(2) nanomask were clearly observed at the interface between GaN nanorods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). From the reflectance spectra we show strong reflectance differences due to the different refractive index gradient between the GaN grown on the nanotemplate and sapphire. It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). The LEDs with embedded microscale air voids and an SiO(2) nanomask exhibit smaller reverse-bias current and large enhancement of the light output (65% at 20 mA) compared with conventional LEDs.
Authors:
Ching-Hsueh Chiu; Chien-Chung Lin; Hau-Vei Han; Che-Yu Liu; Yan-Hao Chen; Yu-Pin Lan; Peichen Yu; Hao-Chung Kuo; Tien-Chang Lu; Shing-Chung Wang; Chun-Yen Chang
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Publication Detail:
Type:  Journal Article     Date:  2012-01-06
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Feb 
Date Detail:
Created Date:  2012-01-06     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  045303     Citation Subset:  IM    
Affiliation:
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan, Republic of China.
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