Document Detail


High-Pressure Transitions of Germanium and a New High-Pressure Form of Germanium.
MedLine Citation:
PMID:  17793559     Owner:  NLM     Status:  PubMed-not-MEDLINE    
Abstract/OtherAbstract:
Some transitions in germanium and other semiconductor systems have been detected after very long exposure to high pressures followed by various quenching techniques. In the case of Ge, a new high-pressure polymorph, Ge-IV, has been synthesized above 110 kilobars with a body-centered-cubic structure. The pressure for the Ge-I right harpoon-up Ge-III (body-centered-tetragonal structure) transition has been revised from about 120 to 25 kilobars at 30 degrees C. The transition from the Ge-I (diamond structure) to the Ge-II (white tin structure) is metastable up to 140 kilobars. Thus some phase diagrams based on discontinuities observed in essentially dynamic systems may be inaccurate.
Authors:
C H Bates; F Dachille; R Roy
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Science (New York, N.Y.)     Volume:  147     ISSN:  0036-8075     ISO Abbreviation:  Science     Publication Date:  1965 Feb 
Date Detail:
Created Date:  2010-06-07     Completed Date:  2010-07-02     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0404511     Medline TA:  Science     Country:  United States    
Other Details:
Languages:  eng     Pagination:  860-2     Citation Subset:  -    
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