Document Detail


The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature.
MedLine Citation:
PMID:  22421164     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
The Hanle effect in InAs/GaAs quantum dots (QDs) is studied under optical orientation as a function of temperature over the range of 150-300 K, with the aim of understanding the physical mechanism responsible for the observed sharp increase of electron spin polarization with increasing temperature. The deduced spin lifetime T(s) of positive trions in the QDs is found to be independent of temperature, and is also insensitive to excitation energy and density. It is argued that the measured T(s) is mainly determined by the longitudinal spin-flip time (T(1)) and the spin dephasing time [Formula: see text] of the studied QD ensemble, of which both are temperature independent over the studied temperature range and the latter makes a larger contribution. The observed sharply rising QD spin polarization degree with increasing temperature, on the other hand, is shown to be induced by an increase in spin injection efficiency from the barrier/wetting layer and also by a moderate increase in spin detection efficiency of the QD.
Authors:
J Beyer; I A Buyanova; S Suraprapapich; C W Tu; W M Chen
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Publication Detail:
Type:  Journal Article     Date:  2012-03-16
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Apr 
Date Detail:
Created Date:  2012-03-16     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  135705     Citation Subset:  IM    
Affiliation:
Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden.
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