Document Detail


GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer.
MedLine Citation:
PMID:  24922249     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm<sup>2</sup>) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.
Authors:
Wei-Chih Lai; Chih-Nan Lin; Yi-Chun Lai; Peichen Yu; Gou Chung Chi; Shoou-Jinn Chang
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Publication Detail:
Type:  JOURNAL ARTICLE    
Journal Detail:
Title:  Optics express     Volume:  22     ISSN:  1094-4087     ISO Abbreviation:  Opt Express     Publication Date:  2014 Mar 
Date Detail:
Created Date:  2014-6-12     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101137103     Medline TA:  Opt Express     Country:  -    
Other Details:
Languages:  ENG     Pagination:  A396-A401     Citation Subset:  -    
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