| GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate. | |
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MedLine Citation:
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PMID: 21174451 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode. |
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Authors:
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Linus C Chuang; Forrest G Sedgwick; Roger Chen; Wai Son Ko; Michael Moewe; Kar Wei Ng; Thai-Truong D Tran; Connie Chang-Hasnain |
Publication Detail:
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Type: JOURNAL ARTICLE Date: 2010-12-21 |
Journal Detail:
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Title: Nano letters Volume: - ISSN: 1530-6992 ISO Abbreviation: - Publication Date: 2010 Dec |
Date Detail:
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Created Date: 2010-12-22 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101088070 Medline TA: Nano Lett Country: - |
Other Details:
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Languages: ENG Pagination: - Citation Subset: - |
Affiliation:
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Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, United States. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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