Document Detail

Formation of Through-Holes in Si Wafers by Using Anodically Polarized Needle Electrodes in HF Solution.
MedLine Citation:
PMID:  21634796     Owner:  NLM     Status:  Publisher    
Electrochemical pore formation in Si using an anodized needle electrode was studied. In the electrochemical process, a Pt, Ir or Pd needle with a diameter of 50 - 200 μm was brought into contact at its tip with a Si wafer, which was not connected to an external circuit, in HF solution. By applying an anodic potential to the needle electrode against a Pt counter electrode, a pore with a diameter slightly larger than the diameter of the needle electrode was formed in both p-type and n-type Si, of which current efficiency was higher for n-type Si. Through-holes were electrochemically formed in p-type and n-type Si wafers at speeds higher than 30 μm min<sup>-1</sup> using a sharpened Ir needle electrode. A model was proposed to explain the results, in which the pore formation was attributed to successive dissolution of Si atoms near the 3-phase (Si/metal/HF solution) boundary by positive holes injected from the needle electrode to the surface of Si.
Tomohiko Sugita; Chia-Lung Lee; Shigeru Ikeda; Michio Matsumura
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2011-6-2
Journal Detail:
Title:  ACS applied materials & interfaces     Volume:  -     ISSN:  1944-8252     ISO Abbreviation:  -     Publication Date:  2011 Jun 
Date Detail:
Created Date:  2011-6-3     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101504991     Medline TA:  ACS Appl Mater Interfaces     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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