Document Detail

Field effect transistors and photodetectors based on nanocrystalline graphene derived from electron beam induced carbonaceous patterns.
MedLine Citation:
PMID:  23036939     Owner:  NLM     Status:  In-Data-Review    
We describe a transfer-free method for the fabrication of nanocrystalline graphene (nc-graphene) on SiO(2) substrates directly from patterned carbonaceous deposits. The deposits were produced from the residual hydrocarbons present in the vacuum chamber without any external source by using an electron beam induced carbonaceous deposition (EBICD) process. Thermal treatment under vacuum conditions in the presence of Ni catalyst transformed the EBIC deposit into nc-graphene patterns, confirmed using Raman and TEM analysis. The nc-graphene patterns have been employed as an active p-type channel material in a field effect transistor (FET) which showed a hole mobility of ∼90 cm(2) V(-1) s(-1). The nc-graphene also proved to be suitable material for IR detection.
Narendra Kurra; Venkata Srinu Bhadram; Chandrabhas Narayana; G U Kulkarni
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Publication Detail:
Type:  Journal Article     Date:  2012-10-04
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-05     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  425301     Citation Subset:  IM    
Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560064, India.
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