Document Detail

Fabrication and characteristics of an nc-Si/c-Si heterojunction MOSFETs pressure sensor.
MedLine Citation:
PMID:  22778646     Owner:  NLM     Status:  PubMed-not-MEDLINE    
A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W) ratio is 2:1, and the silicon membrane thickness is 75 μm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 μm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor.
Xiaofeng Zhao; Dianzhong Wen; Gang Li
Related Documents :
21999196 - Influence of abcb1 (p-glycoprotein) haplotypes on nortriptyline pharmacokinetics and no...
2351216 - Pressure measurements as predictors for peroperative neurologic deficits in carotid sur...
1625376 - Systems analysis of the carotid sinus baroreflex system using a sum-of-sinusoidal input.
21649556 - Blood pressure in children in relation to relative body fat composition and cardio-resp...
23839626 - Effect of nicardipine on vascular capacitance: comparison with sodium nitroprusside dur...
8170876 - Automated blood pressure monitoring. should it be used routinely in managing hypertension?
Publication Detail:
Type:  Journal Article     Date:  2012-05-14
Journal Detail:
Title:  Sensors (Basel, Switzerland)     Volume:  12     ISSN:  1424-8220     ISO Abbreviation:  Sensors (Basel)     Publication Date:  2012  
Date Detail:
Created Date:  2012-07-10     Completed Date:  2012-11-01     Revised Date:  2013-05-30    
Medline Journal Info:
Nlm Unique ID:  101204366     Medline TA:  Sensors (Basel)     Country:  Switzerland    
Other Details:
Languages:  eng     Pagination:  6369-79     Citation Subset:  -    
Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Major Laboratories of Integrated Circuits, Heilongjiang University, Harbin 150080, China.
Export Citation:
APA/MLA Format     Download EndNote     Download BibTex
MeSH Terms

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine

Previous Document:  Accuracy assessment of digital surface models based on WorldView-2 and ADS80 stereo remote sensing d...
Next Document:  Enabling communication in emergency response environments.