Document Detail


Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching.
MedLine Citation:
PMID:  18698834     Owner:  NLM     Status:  PubMed-not-MEDLINE    
Abstract/OtherAbstract:
Large-area high density silicon nanowire (SiNW) arrays were fabricated by metal-assisted chemical etching of silicon, utilizing anodic aluminum oxide (AAO) as a patterning mask of a thin metallic film on a Si (100) substrate. Both the diameter of the pores in the AAO mask and the thickness of the metal film affected the diameter of SiNWs. The diameter of the SiNWs decreased with an increase of thickness of the metal film. Large-area SiNWs with average diameters of 20 nm down to 8 nm and wire densities as high as 10 (10) wires/cm (2) were accomplished. These SiNWs were single crystalline and vertically aligned to the (100) substrate. It was revealed by transmission electron microscopy that the SiNWs were of high crystalline quality and showed a smooth surface.
Authors:
Zhipeng Huang; Xuanxiong Zhang; Manfred Reiche; Lifeng Liu; Woo Lee; Tomohiro Shimizu; Stephan Senz; Ulrich Gösele
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Publication Detail:
Type:  Journal Article     Date:  2008-08-13
Journal Detail:
Title:  Nano letters     Volume:  8     ISSN:  1530-6984     ISO Abbreviation:  Nano Lett.     Publication Date:  2008 Sep 
Date Detail:
Created Date:  2008-09-12     Completed Date:  2008-10-28     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088070     Medline TA:  Nano Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  3046-51     Citation Subset:  -    
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle Germany.
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