| Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation. | |
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MedLine Citation:
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PMID: 22414783 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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The electroluminescence (EL) at 1.54 µm of metal-oxide-semiconductor (MOS) devices with Er(3+) ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO(2) layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er(3+) emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er(3+) is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er(3+) ions. On the contrary, direct impact excitation of Er(3+) by hot injected carriers starts at the Fowler-Nordheim injection threshold (above 5 MV cm(-1)) and dominates for high-field APV excitation. |
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Authors:
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J M Ramírez; F Ferrarese Lupi; O Jambois; Y Berencén; D Navarro-Urrios; A Anopchenko; A Marconi; N Prtljaga; A Tengattini; L Pavesi; J P Colonna; J M Fedeli; B Garrido |
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Publication Detail:
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Type: JOURNAL ARTICLE Date: 2012-3-13 |
Journal Detail:
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Title: Nanotechnology Volume: 23 ISSN: 1361-6528 ISO Abbreviation: - Publication Date: 2012 Mar |
Date Detail:
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Created Date: 2012-3-14 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101241272 Medline TA: Nanotechnology Country: - |
Other Details:
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Languages: ENG Pagination: 125203 Citation Subset: - |
Affiliation:
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Departament d'Electrònica, Universitat de Barcelona, Carrer Martí i Franquès 1, Barcelona 08028, Spain. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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