Document Detail


Enhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgap.
MedLine Citation:
PMID:  23149422     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
We propose a novel sloped dielectric geometry in graphene as a band engineering method for widening the depletion region and increasing the electrical rectification effect in graphene pn junctions. Enhanced current-rectification was achieved in a bilayer graphene with a sloped dielectric top gate and a normal back gate. A bias was applied to the top gate to induce a spatially modulated and sloped band configuration, while a back-gate bias was applied to open a bandgap. The sloped band can be tuned to separate n- and p-type regions in the bilayer graphene, depending on a suitable choice of gate voltage. The effective depletion region between the n- and p-type regions can be spatially enlarged due to the proposed top-gate structure. As a result, a strong non-linear electric current was observed during drain bias sweeping, demonstrating the expected rectification behavior with an on/off ratio higher than all previously reported values for graphene pn junctions. The observed rectification was modified to a linear current-voltage relationship by adjusting the biases of both gates to form an nn- or pp-type junction configuration. These results demonstrate that an external voltage can control the current flow in atomic film diodes.
Authors:
Alex Aparecido-Ferreira; Hisao Miyazaki; Song-Lin Li; Katsuyoshi Komatsu; Shu Nakaharai; Kazuhito Tsukagoshi
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-11-13
Journal Detail:
Title:  Nanoscale     Volume:  -     ISSN:  2040-3372     ISO Abbreviation:  Nanoscale     Publication Date:  2012 Nov 
Date Detail:
Created Date:  2012-11-14     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101525249     Medline TA:  Nanoscale     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Affiliation:
WPI-MANA, NIMS, Tsukuba 305-0047, Japan. tsukagoshi.kazuhito@nims.go.jp.
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