| Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodes. | |
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MedLine Citation:
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PMID: 20847762 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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We report on the development of periodically oriented embedded air protrusion (EAP) structures at the GaN-sapphire interface in InGaN/GaN LEDs. A specific SiO(2) mask pattern and a simple wet etching process were utilized for the fabrication of EAP structures. A strong coupling between closely proximate air cavities and the multiple quantum wells promoted spontaneous emission due to the high-index contrast at the GaN-air interface. As a result, the light output power of the EAP LED was 2.2 times higher than that of a conventional LED at an injection current of 20 mA. |
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Authors:
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Hyung Gu Kim; Hyun Kyu Kim; Hee Yun Kim; Hyun Jeong; S Chandramohan; Periyayya Uthirakumar; Mun Seok Jeong; Jeong-Sik Lee; Eun-Kyung Suh; Chang-Hee Hong |
Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Optics letters Volume: 35 ISSN: 1539-4794 ISO Abbreviation: Opt Lett Publication Date: 2010 Sep |
Date Detail:
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Created Date: 2010-09-17 Completed Date: 2011-01-31 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 7708433 Medline TA: Opt Lett Country: United States |
Other Details:
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Languages: eng Pagination: 3012-4 Citation Subset: - |
Affiliation:
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School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, South Korea. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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