| Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires. | |
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MedLine Citation:
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PMID: 21508495 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructed using the NWs by the direct transfer and dielectrophoresis methods. At an excitation current of 2 µA, the electroluminescence spectrum showed lasing behavior, and this phenomenon was explained by the ZnO-nanostructure-related cavity property. |
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Authors:
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Kwangeun Kim; Taeho Moon; Jeongyong Kim; Sangsig Kim |
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Publication Detail:
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Type: JOURNAL ARTICLE Date: 2011-4-21 |
Journal Detail:
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Title: Nanotechnology Volume: 22 ISSN: 1361-6528 ISO Abbreviation: - Publication Date: 2011 Apr |
Date Detail:
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Created Date: 2011-4-21 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101241272 Medline TA: Nanotechnology Country: - |
Other Details:
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Languages: ENG Pagination: 245203 Citation Subset: - |
Affiliation:
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Department of Electrical Engineering, Korea University, Seoul 136-713, Korea. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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