| Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms. | |
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MedLine Citation:
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PMID: 21403224 Owner: NLM Status: In-Data-Review |
Abstract/OtherAbstract:
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We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. Special attention was given to determining the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the area of graphene channel showed that the dominant contributions to the low-frequency electronic noise come from the graphene layer itself rather than from the contacts. Aging of graphene transistors due to exposure to ambient conditions for over a month resulted in substantially increased noise, attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors either increased with deviation from the charge neutrality point or depended weakly on the gate bias. This observation confirms that the low-frequency noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors. |
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Authors:
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S Rumyantsev; G Liu; W Stillman; M Shur; A A Balandin |
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Publication Detail:
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Type: Journal Article Date: 2010-09-10 |
Journal Detail:
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Title: Journal of physics. Condensed matter : an Institute of Physics journal Volume: 22 ISSN: 0953-8984 ISO Abbreviation: J Phys Condens Matter Publication Date: 2010 Oct |
Date Detail:
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Created Date: 2011-03-15 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101165248 Medline TA: J Phys Condens Matter Country: England |
Other Details:
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Languages: eng Pagination: 395302 Citation Subset: IM |
Affiliation:
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Center for Integrated Electronics, Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA. Ioffe Institute, Russian Academy of Sciences, St Petersburg, 194021, Russia. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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