| Electrical breakdown of nanowires. | |
| | |
MedLine Citation:
|
PMID: 21967081 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
|
The instantaneous electrical breakdown measurement of GaN and Ag nanowires are performed by in situ TEM method. Our results directly reveal the mechanism that typical semiconductor nanowires are thermally heated to be broken at the midpoint, while metallic nanowires are broken down near two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of materials. |
| | |
Authors:
|
Jiong Zhao; Hongyu Sun; Sheng Dai; Yan Wang; Jing Zhu |
Publication Detail:
|
Type: JOURNAL ARTICLE Date: 2011-10-3 |
Journal Detail:
|
Title: Nano letters Volume: - ISSN: 1530-6992 ISO Abbreviation: - Publication Date: 2011 Oct |
Date Detail:
|
Created Date: 2011-10-4 Completed Date: - Revised Date: - |
Medline Journal Info:
|
Nlm Unique ID: 101088070 Medline TA: Nano Lett Country: - |
Other Details:
|
Languages: ENG Pagination: - Citation Subset: - |
Export Citation:
|
APA/MLA Format Download EndNote Download BibTex |
| MeSH Terms | |
Descriptor/Qualifier:
|
|
From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
Previous Document: A Large Coronary-Pulmonary Artery Fistula in a Cyanotic Patient Leading to Severe Biventricular Dysf...
Next Document: The influence of psycholinguistic variables on articulatory errors in naming in progressive motor sp...