Document Detail


Efficiency enhancement InGaP/GaAs dual-junction solar cell with subwavelength antireflection nanorod arrays.
MedLine Citation:
PMID:  22408983     Owner:  NLM     Status:  In-Process    
Abstract/OtherAbstract:
The enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated utilizing broad-band and omnidirectional antireflection nanorod arrays. The nanorod arrays were fabricated by self-assembled Ni clusters, followed by inductively-coupled-plasma reactive ion etching. The conversion efficiency measured under one-sun air mass 1.5 global illuminations at room temperature was improved by 10.8%. The light absorption efficiencies of the top InGaP and bottom GaAs cells were also studied under the influence of nanorod arrays. The enhanced absorption efficiency was mostly contributed from the short wavelength absorption by top cell. Surface nanorod arrays served not only as broad-band omnidirectional antireflection layers but also scattering sources. The structure can be further optimized to obtain the maximum conversion efficiency.
Authors:
Min-An Tsai; Hsin Chu Chen; Ping Chen Tseng; Peichen Yu; Chin Hua Chiu; Hao Chung Kuo; Shiuan Huei Lin
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Journal of nanoscience and nanotechnology     Volume:  11     ISSN:  1533-4880     ISO Abbreviation:  J Nanosci Nanotechnol     Publication Date:  2011 Dec 
Date Detail:
Created Date:  2012-03-13     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088195     Medline TA:  J Nanosci Nanotechnol     Country:  United States    
Other Details:
Languages:  eng     Pagination:  10729-32     Citation Subset:  IM    
Affiliation:
Department of Photonics, Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, ROC.
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