Document Detail

Effects of growth pressure on the structural and optical properties of multi quantum wells (MQWs) in blue LED.
MedLine Citation:
PMID:  22940530     Owner:  NLM     Status:  PubMed-not-MEDLINE    
The effects of growth pressure in metal-organic chemical vapor deposition (MOCVD) on the structural and optical properties of InGaN/GaN multiple-quantum-wells (MQWs) grown on c-plane sapphire substrate were investigated by scanning transmission electron microscopy (STEM), atom probe tomography (APT), Raman spectroscopy and electroluminescence (EL) spectroscopy. As the growth pressure decreased, the growth rate of the InGaN layer increased, leading to a decrease in the frequency of the GaN A1(LO) mode peak and broadening of its full width half maximum (FWHM). The intensity of the EL spectra peaked at a growth pressure of 250 Torr with a narrow FWHM at high forward current. These optical properties are explained by either a high degree of compositional fluctuation of indium in the MQW and/or the high crystallinity of the InGaN layer due to the low growth rate under high pressure.
D H Jang; G H Gu; B H Lee; C G Park
Publication Detail:
Type:  Journal Article     Date:  2012-07-27
Journal Detail:
Title:  Ultramicroscopy     Volume:  127     ISSN:  1879-2723     ISO Abbreviation:  Ultramicroscopy     Publication Date:  2013 Apr 
Date Detail:
Created Date:  2013-03-25     Completed Date:  2013-09-06     Revised Date:  2013-10-21    
Medline Journal Info:
Nlm Unique ID:  7513702     Medline TA:  Ultramicroscopy     Country:  Netherlands    
Other Details:
Languages:  eng     Pagination:  114-8     Citation Subset:  -    
Copyright Information:
Copyright © 2012. Published by Elsevier B.V.
Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea.
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Erratum In:
Ultramicroscopy. 2013 Oct;133:120

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