Document Detail


Effect of static magnetic fields on the budding of yeast cells.
MedLine Citation:
PMID:  20683909     Owner:  NLM     Status:  In-Process    
Abstract/OtherAbstract:
The effect of static magnetic fields on the budding of single yeast cells was investigated using a magnetic circuit that was capable of generating a strong magnetic field (2.93 T) and gradient (6100 T²  m⁻¹). Saccharomyces cerevisiae yeast cells were grown in an aqueous YPD agar in a silica capillary under either a homogeneous or inhomogeneous static magnetic field. Although the size of budding yeast cells was only slightly affected by the magnetic fields after 4 h, the budding angle was clearly affected by the direction of the homogeneous and inhomogeneous magnetic fields. In the homogeneous magnetic field, the budding direction of daughter yeast cells was mainly oriented in the direction of magnetic field B. However, when subjected to the inhomogeneous magnetic field, the daughter yeast cells tended to bud along the axis of capillary flow in regions where the magnetic gradient, estimated by B(dB/dx), were high. Based on the present experimental results, the possible mechanism for the magnetic effect on the budding direction of daughter yeast cells is theoretically discussed.
Authors:
Shigeki Egami; Yujiro Naruse; Hitoshi Watarai
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Bioelectromagnetics     Volume:  31     ISSN:  1521-186X     ISO Abbreviation:  Bioelectromagnetics     Publication Date:  2010 Dec 
Date Detail:
Created Date:  2010-11-15     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  8008281     Medline TA:  Bioelectromagnetics     Country:  United States    
Other Details:
Languages:  eng     Pagination:  622-9     Citation Subset:  IM    
Copyright Information:
Copyright © 2010 Wiley-Liss, Inc.
Affiliation:
Department of Chemistry, Graduate School of Science, Osaka University, Toyonaka, Osaka, Japan. egami@chem.sci.osaka-u.ac.jp
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