Document Detail

Effect of nitrogen plasma on the surface of indium oxide nanowires.
MedLine Citation:
PMID:  23060605     Owner:  NLM     Status:  Publisher    
The change in the atomic nitrogen concentration on a semiconducting nanowire's surface and the consequent changes in the electrical characteristics of a nanowire transistor were investigated by exposing In(2)O(3) nanowires to nitrogen (N(2)) plasma. After plasma was applied at N(2) flow rates of 20, 40, and 70 sccm with a fixed source power of 50 W, the In(2)O(3) nanowire transistor exhibited changes in the threshold voltage (V(th)), subthreshold slope (SS), and on-current (I(on)). In particular, after treatment at an N(2) flow rate of 40 sccm, V(th) shifted positively by ∼2.3 V, the SS improved by ∼0.24 V/dec, and I(on) increased by ∼0.8 μA on average. The changes are attributed to the combination of nitrogen ions produced by the plasma with oxygen vacancies or indium interstitials on the nanowires. Optimization of the plasma treatment conditions is expected to yield desirable device characteristics by a simple, nondestructive process.
Keumyoung Seo; Seongmin Kim; David B Janes; Min Wook Jung; Ki-Seok An; Sanghyun Ju
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-10-11
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-12     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  -    
Other Details:
Languages:  ENG     Pagination:  435201     Citation Subset:  -    
Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do, 443-760, Republic of Korea.
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