Document Detail


Effect of carrier injection stress in thin film solar cells by impedance spectroscopy.
MedLine Citation:
PMID:  22849108     Owner:  NLM     Status:  In-Process    
Abstract/OtherAbstract:
In amorphous silicon solar cells, degradation is directly related to V(oc), FF and cell performance. The dependence of the stability of thin film amorphous silicon solar cells is studied in terms of the volume fraction of B2H6 in the p-layer. When the volume fraction of B2H6 is increased by an order of magnitude, the doping-induced defects tend to increase quite rapidly. Low-doped p-type a-SiO(x) layers had better initial properties but rapidly degraded. Heavily doped p-type a-SiO(x) layers had lower initial properties but displayed better stability. The improvement in stability is explained in conjunction with the capacitance and resistance values of impedance spectroscopy. When the B2H6 gas flow rate is increased, the cell is degraded showing a capacitance decay decrease from 51.75% to less than 18.18%. In addition, the increase in the resistance decreased from 90.90% to 11.73%.
Authors:
Seungman Park; Sunhwa Lee; Jinjoo Park; Youngkuk Kim; Kichan Yoon; Chonghoon Shin; Seungsin Baek; Youn-Jung Lee; Junsin Yi
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Journal of nanoscience and nanotechnology     Volume:  12     ISSN:  1533-4880     ISO Abbreviation:  J Nanosci Nanotechnol     Publication Date:  2012 Apr 
Date Detail:
Created Date:  2012-08-01     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088195     Medline TA:  J Nanosci Nanotechnol     Country:  United States    
Other Details:
Languages:  eng     Pagination:  3288-91     Citation Subset:  IM    
Affiliation:
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
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