| Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene. | |
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MedLine Citation:
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PMID: 20684526 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise ratios of unsuspended graphene devices. Here we present the four-probe low-frequency noise (1/f) characteristics in back-gated single layer graphene (SLG) and bilayer graphene (BLG) samples. Contrary to the expected noise increase with the resistance, the noise for SLG decreases near the Dirac point, possibly due to the effects of the spatial charge inhomogeneity. For BLG, a similar noise reduction near the Dirac point is observed, but with a different gate dependence of its noise behavior. Some possible reasons for the different noise behavior between SLG and BLG are discussed. |
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Authors:
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Guangyu Xu; Carlos M Torres; Yuegang Zhang; Fei Liu; Emil B Song; Minsheng Wang; Yi Zhou; Caifu Zeng; Kang L Wang |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Nano letters Volume: 10 ISSN: 1530-6992 ISO Abbreviation: Nano Lett. Publication Date: 2010 Sep |
Date Detail:
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Created Date: 2010-09-08 Completed Date: 2011-01-04 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101088070 Medline TA: Nano Lett Country: United States |
Other Details:
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Languages: eng Pagination: 3312-7 Citation Subset: - |
Affiliation:
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Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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