Document Detail


Depth-dependent imaging of individual dopant atoms in silicon.
MedLine Citation:
PMID:  15306055     Owner:  NLM     Status:  MEDLINE    
Abstract/OtherAbstract:
We have achieved atomic-resolution imaging of single dopant atoms buried inside a crystal, a key goal for microelectronic device characterization, in Sb-doped Si using annular dark-field scanning transmission electron microscopy. In an amorphous material, the dopant signal is largely independent of depth, but in a crystal, channeling of the electron probe causes the image intensity of the atomic columns to vary with the depths of the dopants in each column. We can determine the average dopant concentration in small volumes, and, at low concentrations, the depth in a column of a single dopant. Dopant atoms can also serve as tags for experimental measurements of probe spreading and channeling. Both effects remain crucial even with spherical aberration correction of the probe. Parameters are given for a corrected Bloch-wave model that qualitatively describes the channeling at thicknesses 20 nm, but does not account for probe spreading at larger thicknesses. In thick samples, column-to-column coupling of the probe can make a dopant atom appear in the image in a different atom column than its physical position.
Authors:
P M Voyles; D A Muller; E J Kirkland
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada     Volume:  10     ISSN:  1431-9276     ISO Abbreviation:  Microsc. Microanal.     Publication Date:  2004 Apr 
Date Detail:
Created Date:  2004-08-12     Completed Date:  2004-09-16     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  9712707     Medline TA:  Microsc Microanal     Country:  United States    
Other Details:
Languages:  eng     Pagination:  291-300     Citation Subset:  IM    
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974-0636, USA. voyles@engr.wisc.edu
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MeSH Terms
Descriptor/Qualifier:
Computer Simulation
Crystallization
Electrons
Microscopy, Electron, Scanning Transmission
Silicon / chemistry*
Thermodynamics
Chemical
Reg. No./Substance:
7440-21-3/Silicon

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


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