Document Detail

Defect-free <110> Zinc-blende Structured InAs Nanowires Catalyzed by Palladium.
MedLine Citation:
PMID:  23030768     Owner:  NLM     Status:  Publisher    
In this study, we report the epitaxial growth of defect-free zinc-blende structured InAs nanowires on GaAs{111}B substrates using palladium catalysts in a metal-organic chemical vapor deposition reactor. Through detailed morphological, structural and chemical characterizations using electron microscopy, it is found that these defect-free InAs nanowires grew along the 〈1 ̅1 ̅0〉 directions with four low-energy {111} faceted sidewalls and {1 ̅1 ̅3 ̅} nanowire/catalyst interfaces. It is anticipated that these defect-free 〈1 ̅1 ̅0〉 nanowires benefit from the fact that the nanowire/catalyst interfaces does not contain the {111} planes and the nanowire growth direction is not along the <111> directions. This study provides an effective approach to control the crystal structure and quality of epitaxial III-V nanowires.
Hong-Yi Xu; Yong Wang; Yanan N Guo; Zhiming Liao; Michael Gao; Hark Hoe Tan; Jagadish Chennupati; Jin Zou
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-10-3
Journal Detail:
Title:  Nano letters     Volume:  -     ISSN:  1530-6992     ISO Abbreviation:  Nano Lett.     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-3     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088070     Medline TA:  Nano Lett     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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